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The Effect of IrO2-IrO2/Hf/LaAlO3 Gate Dielectric on the Bias-Temperature Instability of 3-D GOI CMOSFETs

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1109/LED.2005.848130
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Publication date
In
  • IEEE Electron Device Letters 26, no. 6 (2005): 407–409.
NPARC number12744299
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Record identifier75da39aa-8372-41b2-8155-25899244d286
Record created2009-10-27
Record modified2020-04-07
Date modified: