Effect of p-dopant positioning in low-threshold, InGaAs/GaAs/AlGaAs, MQW GRINSCH lasers with GaAs etch-stop layer for multiwavelength applications

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1117/12.237687
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Abstract
PublisherSPIE
PlaceSan Jose, CA, USA
NPARC number12330177
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Record identifier74862b32-7af1-47b4-b35f-4f6555bea855
Record created2009-09-10
Record modified2020-04-16
Date modified: