Author | Search for: Teppe, F.; Search for: Consejo, C.; Search for: Torres, J.; Search for: Chenaud, B.; Search for: Solignac, P.; Search for: Fathololoumi, S.1; Search for: Wasilewski, Z.R.1; Search for: Zholudev, M.; Search for: Dyakonova, N.; Search for: Coquillat, D.; Search for: El Fatimy, A.; Search for: Buzatu, P.; Search for: Chaubet, C.; Search for: Knap, W. |
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Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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Format | Text, Article |
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Subject | All-solid-state; GaAs/AlGaAs; Gate length; Liquid nitrogen temperature; Nanometer size; Physical mechanism; Quantum cascades; Resonant detection; Saturation regime; Terahertz detection; Terahertz systems; THz radiation; Transistor channels; Detectors; Drain current; Gates (transistor); Liquid nitrogen; Nitrogen plasma; Plasma waves; Quantum cascade lasers; Quantum theory; Solid state lasers; Terahertz waves; Transistors; Terahertz wave detectors |
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Abstract | We report on the resonant detection of a 3.1 THz radiation produced by a quantum cascade laser using a 250 nm gate length GaAs/AlGaAs field effect transistor at liquid nitrogen temperature. We show that the physical mechanism of the detection is related to the plasma waves excited in the transistor channel. The detection is enhanced by increasing the drain current and driving the transistor into saturation regime. These results clearly show that plasma wave nanometer-size transistors can be used as detectors in all-solid-state terahertz systems where quantum cascade lasers act as sources. |
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Publication date | 2011 |
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In | |
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Language | English |
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Peer reviewed | Yes |
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NPARC number | 21271414 |
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Export citation | Export as RIS |
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Report a correction | Report a correction (opens in a new tab) |
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Record identifier | 6a61bb57-2145-4e27-a1b1-535b45e64299 |
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Record created | 2014-03-24 |
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Record modified | 2020-04-21 |
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