Band engineering in nanowires: Ab initio model of band edges modified by (111) biaxial strain in group IIIA-VA semiconductors

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1103/PhysRevB.86.085411
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  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
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LanguageEnglish
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NPARC number21269568
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Record created2013-12-12
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