Thermal hydrosilylation of undecylenic acid with porous silicon

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Journal titleJournal of the Electrochemical Society
Subjectsilicon; elemental semiconductors; surface chemistry; organic compounds; porous semiconductors; X-ray photoelectron spectra; infrared spectra; photoluminescence
AbstractThe thermal reaction of undecylenic acid with a hydrogen-terminated porous silicon surface takes place at 95°C to yield an organic monolayer covalently attached to the surface through Si-C bonds. The acid terminal group remains intact and is not affected by the chemical process. Under the same conditions, alcohols break the Si-Si back bonds of the PSi matrix. In contrast, the acid function does not react with either the Si-H or the Si-Si bonds of the PSi surface and the reaction takes place at the terminal Formula double bond of the molecule. When the reaction was carried out with decanoic acid, under the same conditions, the reaction was not complete. The functionalized surfaces were characterized using transmission infrared and X-ray photoelectron spectroscopies. The effect of the chemical process on the photoluminescence has been studied, and the stability against corrosion in 100% humidity was verified using chemography. We have demonstrated that the derivatized surface with undecylenic acid can be activated by a simple chemical route using N-hydroxysuccimide in the presence of N-ethyl-N ′-(3-dimethylaminopropyl) carbodiimide hydrochloride.
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AffiliationNational Research Council Canada; NRC Steacie Institute for Molecular Sciences; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12333570
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Record identifier6883e2c0-53a6-433c-9c9c-44c9844a73e0
Record created2009-09-10
Record modified2016-05-09
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