DOI | Resolve DOI: https://doi.org/10.1016/0022-0248(95)00749-0 |
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Author | Search for: Finnie, P.1; Search for: Buchanan, M.1; Search for: Lacelle, C.1; Search for: Roth, A.P.1 |
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Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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Format | Text, Article |
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Abstract | Selective area growth on silicon dioxide masked gallium arsenide substrates by chemical beam epitaxy is used to fabricate inverted V-shaped mesas. Indium gallium arsenide quantum wells grown on top of these mesas form quantum wire structures. The faceted mesa sidewalls are described as a function of substrate temperature and V/III ratio in terms of a simple geometric model. The photoluminescence spectra show that the wire structure peak is shifted to longer wavelength compared to unpatterned substrates, for all growth temperatures. This shift is explained by the migration of indium. For low temperature growth, a second peak due to sidewall quantum wells is observed. |
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Publication date | 1996-03 |
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In | |
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Language | English |
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Peer reviewed | Yes |
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NPARC number | 12338863 |
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Export citation | Export as RIS |
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Report a correction | Report a correction (opens in a new tab) |
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Record identifier | 6357ec8e-093d-41af-8826-702d2b3222b9 |
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Record created | 2009-09-11 |
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Record modified | 2020-03-20 |
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