Indications of field-directing and self-templating effects on the formation of organic lines on silicon

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1063/1.3562367
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Affiliation
  1. National Research Council of Canada. National Institute for Nanotechnology
FormatText, Article
Subjectgrowth process; metal contacts; molecular patterns; organic nanostructures; Si(1 0 0); silicon surfaces; templating effects; dangling bonds; electric fields; nanostructures; scanning tunneling microscopy; dimers
Abstract
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LanguageEnglish
Peer reviewedYes
NPARC number21271969
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Record identifier62d7afa2-bfd4-4a30-a332-b5ee14d674e0
Record created2014-05-14
Record modified2020-04-21
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