DOI | Resolve DOI: https://doi.org/10.1063/1.121037 |
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Author | Search for: Dupont, Emmanuel1; Search for: McCaffrey, John2; Search for: Liu, H.; Search for: Buchanan, Margaret1; Search for: Yang, Rui; Search for: Lin, C-H; Search for: Zhang, Dongling3; Search for: Pei, S. |
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Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
- National Research Council of Canada. NRC Institute for National Measurement Standards
- National Research Council of Canada. NRC Genomics and Health Initiative
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Format | Text, Article |
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Subject | aluminium compounds; electroluminescent devices; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; semiconductor quantum wells |
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Abstract | We demonstrate the cascade process in mid-infrared electroluminescent InAs/GaInSb/AlSb multi-quantum-well devices. We report the proportional relation between the emitted optical power and the number of periods. This observed scaling is associated with the sequential transport of electrons from one active region to the next situated downstream in potential energy through the injection region. Deviations from this exact scaling are correlated with the variation of the wafer-to-wafer structural quality. |
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Publication date | 1998-03-23 |
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In | |
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Language | English |
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Peer reviewed | Yes |
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NPARC number | 12327604 |
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Export citation | Export as RIS |
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Report a correction | Report a correction (opens in a new tab) |
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Record identifier | 614408ff-f1fd-4684-be02-18ac4f83b2d8 |
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Record created | 2009-09-10 |
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Record modified | 2023-05-10 |
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