DOI | Resolve DOI: https://doi.org/10.1016/S0968-4328(96)00048-0 |
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Author | Search for: Robertson, Mark1; Search for: Corbett, J.; Search for: Webb, James2 |
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Affiliation | - National Research Council of Canada. NRC Institute for Fuel Cell Innovation
- National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
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Format | Text, Article |
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Subject | bilayer; crystal growth; diffraction contrast; electron diffraction; electron microscopy; high resolution; InAlSb; InSb; magnetron sputter epitaxy; semiconductor; superlattice |
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Abstract | High quality InAlSb/InSb bilayers and superlattices have been grown by magnetron sputter epitaxy and the physical structure has been characterized by transmission electron microscopy. It was found that single layers of InAlSb, whose thicknesses greatly exceeded the equilibrium critical thickness, could be grown coherently on (001) InSb for Al concentrations approaching 13-15%. Also, it was observed that planar defects increased in density for both the bilayer and superlattice structures as the Al concentration increased. |
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Publication date | 1997-04 |
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In | |
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NPARC number | 12327315 |
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Export citation | Export as RIS |
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Report a correction | Report a correction (opens in a new tab) |
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Record identifier | 59b66e27-c422-4e43-9940-cf0b51cab5e2 |
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Record created | 2009-09-10 |
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Record modified | 2020-03-20 |
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