Positioned growth and spectroscopy of InP nanowires containing single InAsP quantum dots

From National Research Council Canada

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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Conference2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, 22 May 2011 through 26 May 2011, Berlin
SubjectAu particles; Catalyst-free; e-Beam lithography; Growth conditions; Growth modes; InP; InP wafers; Optical emissions; P-shell; Selective area growth; VLS growth; Catalysis; Catalysts; Chemical beam epitaxy; Indium phosphide; Nanowires; Semiconductor growth; Silicon compounds; Semiconductor quantum dots
Abstract
Publication date
In
LanguageEnglish
Peer reviewedYes
NPARC number21271074
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Record identifier58981bec-fe52-48df-a59f-b53422c9dc85
Record created2014-03-24
Record modified2020-04-21
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