Growth mode of coherent Si1-xGex islands on Si(100)

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Proceedings titleNanotechnology, 2006, IEEE-NANO 2006, Sixth IEEE Conference on
Conference6th IEEE Conference on Nanotechnology, 17-20 July 2006, Cincinnati, Ohio, USA
Pages655658; # of pages: 4
AbstractCoherent Si1-xGexisland growth by molecular beam epitaxy is studied for a fixed growth temperature but for different Ge concentrations x in the range 0.37-0.56. A combined transmission electron microscope, x-ray diffraction, and Raman spectroscopy characterization of the samples showed that during growth the Ge migrates towards the center of the large islands to maintain epitaxial growth and that the most uniform structures are obtained at higher Ge composition when the built-in strain is also higher.
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AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12346455
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Record identifier56001502-978b-4ba5-8cdb-d95fc36484f9
Record created2009-09-17
Record modified2016-05-09
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