| DOI | Resolve DOI: https://doi.org/10.1063/1.3681329 |
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| Author | Search for: Molas, M.; Search for: Gołasa, K.; Search for: Kuldová, K.; Search for: Borysiuk, J.; Search for: Babiński, A.; Search for: Lapointe, J.1; Search for: Wasilewski, Z. R.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | The effect of the In-flush technique on the optical anisotropy of InAs/GaAs quantum dots(QDs) has been investigated. The anisotropy was deduced from low temperature microluminescence measurements of the splitting of the emission lines related to single neutral excitons confined to the QDs. It was found that the anisotropy was significantly smaller in a structure grown by the In-flush technique as compared to a structure grown without this procedure. It is proposed that this anisotropy reduction is due to the reduction in the strain generated within the GaAs barrier when using the In-flush procedure. |
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| Publication date | 2012 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21269030 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 52a4c7a9-3513-462e-a2a6-8a0dd7f5af87 |
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| Record created | 2013-12-02 |
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| Record modified | 2020-04-21 |
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