Light emission in silicon nanostructures

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Proceedings titleJournal of Materials Science: Materials in Electronics
ConferenceSecond International Conference on Optical, Optoelectronic and Photonic Materials and Applications, 2007, 30 July – 3 August 2007, London, UK
IssueSupplement 1
Pages235244; # of pages: 10
AbstractThe many and diverse approaches to materials science problems have greatly enhanced our ability in recent times to engineer the physical properties of semiconductors. Silicon, of all semiconductors, underpins nearly all microelectronics today and will continue to do so for some time to come. However, in optoelectronics and, more recently, in photonics, the severe disadvantage of an indirect band gap has limited the application of elemental silicon. Here we review a number of diverse approaches to engineering efficient light emission in silicon nanostructures. These different approaches are placed in context and their prospects are assessed for applications in silicon-based photonics.
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AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12441084
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Record identifier520fe673-ef6f-45b1-b27a-3624642daa45
Record created2009-09-25
Record modified2016-05-09
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