Optical and electrical properties of bandgap shifted 1.55-/spl mu/m laser diodes

DOIResolve DOI: http://doi.org/10.1109/OFC.1996.907618
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Subject1.55 mum; 1.55-/spl mu/m laser diodes; bandgap shifted; blue-shifted; electrical properties; electroabsorptive modulators; gallium arsenide; gallium compounds; high-energy ion implantation; III-V semiconductors; indium compounds; InGaAsP-InP; InGaAsP-InP QW waveguide laser diodes; integrated optoelectronics; ion implantation; laser transitions; optical communication equipment; optical losses; optical properties; quantum well lasers; rapid thermal annealing; reliable photonic-integrated circuits; spectral line shift; waveguide lasers; waveguide losses
AbstractSummary form only given. In this paper we report on optical and electrical properties of 1.55-/spl mu/m InGaAsP-InP QW waveguide laser diodes blue-shifted using high-energy ion implantation and rapid thermal annealing. We demonstrate that, after shifting, waveguide losses are not increased and there is no significant change in the electrical properties of electroabsorptive modulators and laser diodes. Thus, this is a very attractive technique for achieving inexpensive and reliable photonic-integrated circuits (PIG).
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328836
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Record identifier51e06d74-cd12-45db-8009-8b4b91f5bb08
Record created2009-09-10
Record modified2016-05-09
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