| DOI | Resolve DOI: https://doi.org/10.1109/OFC.1996.907618 |
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| Author | Search for: Koteles, Emil S.1; Search for: He, J. J.1; Search for: Poole, P. J.1; Search for: Davies, M.1; Search for: Dion, M.1; Search for: Feng, Y.1; Search for: Charbonneau, S.1; Search for: Goldberg, R.1; Search for: Mitchell, I. V.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | 1.55 mum; 1.55-/spl mu/m laser diodes; bandgap shifted; blue-shifted; electrical properties; electroabsorptive modulators; gallium arsenide; gallium compounds; high-energy ion implantation; III-V semiconductors; indium compounds; InGaAsP-InP; InGaAsP-InP QW waveguide laser diodes; integrated optoelectronics; ion implantation; laser transitions; optical communication equipment; optical losses; optical properties; quantum well lasers; rapid thermal annealing; reliable photonic-integrated circuits; spectral line shift; waveguide lasers; waveguide losses |
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| Abstract | Summary form only given. In this paper we report on optical and electrical properties of 1.55-/spl mu/m InGaAsP-InP QW waveguide laser diodes blue-shifted using high-energy ion implantation and rapid thermal annealing. We demonstrate that, after shifting, waveguide losses are not increased and there is no significant change in the electrical properties of electroabsorptive modulators and laser diodes. Thus, this is a very attractive technique for achieving inexpensive and reliable photonic-integrated circuits (PIG). |
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| NPARC number | 12328836 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 51e06d74-cd12-45db-8009-8b4b91f5bb08 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-16 |
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