Language selection

Government of Canada / Gouvernement du Canada

Search

Growth of high mobility GaN and AlGaN/GaN HFET structures on 4H-SiC by ammonia-molecular-beam epitaxy

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1063/1.1379785
AuthorSearch for: 1; Search for: 2; Search for: 2; Search for:
Affiliation
  1. National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
  2. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Publication date
In
  • Applied Physics Letters 78, no. 24 (2001): 3845–.
LanguageEnglish
Peer reviewedYes
NPARC number12328724
Export citationExport as RIS
Report a correctionReport a correction (opens in a new tab)
Record identifier51d0bea3-80ff-4cd0-892d-66786be4b20d
Record created2009-09-10
Record modified2023-05-10
Date modified: