Characterization of AlGaN/GaN HEMT devices grown by MBE

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.4028/www.scientific.net/MSF.338-342.1647
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
SubjectDislocation; heterojunction; MBE; microwave; TEM
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LanguageEnglish
NPARC number12327207
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Record identifier4fa19ca2-4b14-4e4e-af30-6a7a9e45872b
Record created2009-09-10
Record modified2020-03-26
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