Characterization of AlGaN/GaN HEMT devices grown by MBE

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Journal titleMaterials Science Forum
Volume338-342: Silicon Carbide and Related Materials-1999
Pages16471650; # of pages: 4
SubjectDislocation; heterojunction; MBE; microwave; TEM
AbstractAmmonia-MBE growth techniques were developed to allow the production of AlGaN and GaN layers suitable for electronic applications on sapphire [000] substrates. DC and RF characterization of AlGaN/GaN HEMT devices have been carried out over a temperature range from -40°C to 200°C. The devices characterized were two finger × 50 µm wide designs with measured gate lengths ranging from 1 µm to 3.5 µm. Hall and CV measurements indicate a 2DEG sheet charge density at the AlGaN/GaN heterojunction interface as high as 1.9×10¹³/cm² and 1.5×10¹³/cm² respectively. Low field mobilities in excess of 950 cm²/V×s have been measured. Room temperature measurements for a device with a gate length of 1 µm and Vds set to 10 V exhibited a pinch off voltage of -5 volts. A maximum drain current of 946 mA/mm and a peak transconductance of 160 mS/mm were also measured. The off state drain to source breakdown voltage is 33 volts. Room temperature RF characterization with Vds=10 volts indicate intrinsic device fT and fMAX to be 15.6 GHz and 49.4 GHz respectively. At maximum power dissipation and chuck temperature, the channel temperature is estimated to be >320°C.
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AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12327207
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Record identifier4fa19ca2-4b14-4e4e-af30-6a7a9e45872b
Record created2009-09-10
Record modified2016-05-09
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