| DOI | Resolve DOI: https://doi.org/10.1364/OE.21.010172 |
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| Author | Search for: Patimisco, P.; Search for: Scamarcio, G.; Search for: Santacroce, M.V.; Search for: Spagnolo, V.; Search for: Vitiello, M.S.; Search for: Dupont, E.1; Search for: Laframboise, S.R.1; Search for: Fathololoumi, S.1; Search for: Razavipour, G.S.; Search for: Wasilewski, Z.1 |
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| Affiliation | - National Research Council of Canada
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| Format | Text, Article |
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| Subject | Active regions; Electronic temperature; Ground level; Optical phonon scattering; Population ratio; Quantum cascades; Quantum-cascade devices; Resonant phonon; Optical lattices; Quantum well lasers; Phonon scattering; equipment; equipment design; equipment failure; light; methodology; radiation scattering; terahertz radiation; thermography; Equipment Design; Equipment Failure Analysis; Light; Scattering, Radiation; Terahertz Radiation; Thermography |
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| Abstract | We measured the lattice and subband electronic temperatures of terahertz quantum cascade devices based on the optical phonon-scattering assisted active region scheme. While the electronic temperature of the injector state (j=4) significantly increases by △T=Te 4 -TL ∼40 K, in analogy with the reported values in resonant phonon scheme (△T ∼70-110 K), both the laser levels (j=2,3) remain much colder with respect to the latter (by a factor of 3-5) and share the same electronic temperature of the ground level (j=1). The electronic population ratio n2/n1 shows that the optical phonon scattering efficiently depopulates the lower laser level (j=2) up to an electronic temperature Te ∼180 K. © 2013 Optical Society of America. |
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| Publication date | 2013 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21270585 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 4c9a4e1b-ce0c-4fed-ac1a-1d87c72fc57e |
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| Record created | 2014-02-17 |
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| Record modified | 2020-04-22 |
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