Surface passivation of AlGaN/GaN HFETs using AlN layer deposited by reactive magnetron sputtering

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1002/pssc.200390119
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
  2. National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
FormatText, Article
Publication date
PublisherWiley
In
LanguageEnglish
Peer reviewedYes
NPARC number12744164
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Record identifier46d28c48-6f3a-4a95-8f2c-e06ec2bd0e02
Record created2009-10-27
Record modified2020-03-30
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