Strain engineering and luminescence in Si/SiGe three dimensional nanostructures

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1557/opl.2011.300
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Affiliation
  1. National Research Council of Canada. Measurement Science and Standards
  2. National Research Council of Canada. Information and Communication Technologies
FormatText, Article
Conference2010 MRS Fall Meeting, 29 November 2010 through 3 December 2010, Boston, MA
SubjectAnalytical electron microscopy; Excitation wavelength; Interface recombination; Low temperature photoluminescence; PL lifetime; PL quantum efficiency; PL spectra; Si/SiGe; Strain engineering; Strained Silicon; Three-dimensional nanostructures; Time-resolved PL measurement; Ultrahigh resolution; Electron microscopy; Germanium; Semiconductor quantum wells; Nanostructures
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LanguageEnglish
Peer reviewedYes
NPARC number21271549
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Record created2014-03-24
Record modified2020-04-21
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