Download | - View accepted manuscript: 1.53µm GaInNAsSb laser diodes grown on GaAs(100) (PDF, 513 KiB)
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DOI | Resolve DOI: https://doi.org/10.1049/el:20057623 |
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Author | Search for: Gupta, J. A.1; Search for: Barrios, P. J.1; Search for: Zhang, X.; Search for: Pakulski, G.1; Search for: Wu, X.1 |
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Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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Format | Text, Article |
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Abstract | GaInNAsSb/GaNAs double quantum well ridge waveguide laser diodes with room temperature lasing wavelength of 1532 nm are reported. The devices exhibit leakage-corrected threshold current densities as low as 969 A cm−2 per quantum well in pulsed mode, with characteristic temperatures as high as 90 K. |
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Publication date | 2005-01-20 |
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In | |
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Language | English |
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NPARC number | 12744533 |
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Export citation | Export as RIS |
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Record identifier | 44223772-9813-484f-8bf8-e7c7c0b53b62 |
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Record created | 2009-10-27 |
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Record modified | 2020-04-07 |
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