Three-Dimensional Metal Gate-High-k-GOI CMOSFETs on 1-Poly-6-Metal 0.18ƒÝm Si Devices

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1109/LED.2004.841861
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  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
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NPARC number12744878
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Record identifier414bab02-5504-43b5-a12f-9cf779350514
Record created2009-10-27
Record modified2020-04-07
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