Terahertz quantum well infrared detectors

  1. Get@NRC: Terahertz quantum well infrared detectors (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1016/j.infrared.2009.05.034
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Journal titleInfrared Physics & Technology
Pages289293; # of pages: 5
SubjectQWIP; photodetector; Tterahertz; quantum wells; GaAs; collective effects
AbstractWe report on recent measurements on GaAs/AlGaAs THz quantum well infrared photodetectors (QWIPs), investigating linewidth broadening as function of doping level. Structures with 3% and 2% Al content in the barrier were grown using molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), respectively. Linewidth widening with increasing doping of the GaAs quantum well could be observed in the detection spectra. The observed shift of peak detection wavelength for different well dopings fits with values obtained from wavefunction calculations, taking into account many-particle effects, namely exchange and correlation energies and the effect of depolarization on the absorption. In addition, activation energies extracted from dark current measurements as function of device temperature are also in agreement with the calculations.
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AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number21268055
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Record identifier3df013bf-33cf-4fda-ab20-9aafa619b937
Record created2013-04-04
Record modified2016-05-09
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