Far infrared spectroscopy of In0.53Ga0.47As quantum wells on InP(100)

DOIResolve DOI: http://doi.org/10.1557/PROC-744-M9.3
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Proceedings title2002 MRS Fall Meeting - Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications
Series titleMaterials Research Society Symposia Proceedings; no. 744
Conference2002 MRS Fall Meeting: Symposium M: Progress in semiconductors II : electronic and optoelectronic applications, 2-5 December 2002, Boston, Massachusetts, USA
Article numberM9.3
Pages583588; # of pages: 6
AbstractPolarized far infrared reflectance was measured at oblique incidence for In0.53Ga0.47As / InP multiple quantum wells grown by chemical beam epitaxy on InP(100) wafers. Both the well thickness (0.25 - 20 nm) and number of periods (10 - 40) were varied. The reflectance spectra contained sharp Berreman modes at the frequencies of the transverse (TO) and longitudinal (LO) optical phonons. The contributions of the individual phonons were resolved with the model fits. Interface layer phonon modes were observed with intensity increasing with number of wells. The interface layers were 0.6 nm thick and of different composition to adjoining wells consistent with cross-sectional scanning tunneling microscope results on the same samples. The variation due to phonon confinement of the InAs- and GaAs-like LO and TO phonon frequencies was obtained.
AffiliationNRC Institute for National Measurement Standards; NRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NRC number357
NPARC number8899685
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Record identifier3d39b10b-72b6-49f0-90ca-452842f671dc
Record created2009-04-22
Record modified2016-05-09
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