| Download | - View accepted manuscript: GaN HEMT and MOS monolithic integration on silicon substrates (PDF, 802 KiB)
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| DOI | Resolve DOI: https://doi.org/10.1002/pssc.201000914 |
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| Author | Search for: Chyurlia, P.1; Search for: Tang, H.1; Search for: Semond, F.; Search for: Lester, T.1; Search for: Bardwell, J. A.1; Search for: Rolfe, S.1; Search for: Tarr, N. G. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | gallium nitride; MOS; MBE; epitaxy; integration; HFET; HEMT |
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| Abstract | A process for monolithically integrating MOS and Al- GaN/GaN HFETs has been developed using a windowed epitaxy technique. AlGaN/GaN HFET devices display a forward current greater than 0.8 A/mm and a breakdown voltage larger than 200 V. Field-plated devices have also been demonstrated. Enclosed MOS devices based on a 900◦C thermal oxide have been produced showing promising characteristics. |
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| Publication date | 2011-06-09 |
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| Publisher | Wiley |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 19542537 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 3d14a365-b150-4c3e-a1bf-e7cfa0d5a961 |
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| Record created | 2012-02-29 |
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| Record modified | 2020-04-21 |
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