| DOI | Resolve DOI: https://doi.org/10.1063/1.4776236 |
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| Author | Search for: Liu, X. Z.; Search for: Xu, Y. G.; Search for: Yu, G.; Search for: Wei, L. M.; Search for: Lin, T.; Search for: Guo, S. L.; Search for: Chu, J. H.; Search for: Zhou, W. Z.; Search for: Zhang, Y. G.; Search for: Lockwood, David J.1 |
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| Affiliation | - National Research Council of Canada. Measurement Science and Standards
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| Format | Text, Article |
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| Subject | Dephasing; Dephasing rates; Effective band gap; Effective g-factor; High mobility; In-plane magnetic fields; Magneto-transport measurement; Micro-roughness; Shubnikov-de Haas oscillations; Tilt angle; Weak antilocalization; Zeeman splittings; Zero-field spin splitting; Carrier concentration; Gallium; Semiconductor quantum wells |
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| Abstract | The magneotransport properties of a high carrier concentration and high mobility 20-nm thick In0.53Ga0.47As/In 0.52Al0.48As quantum well (QW) are investigated by tilt angle dependent Shubnikov-de Haas oscillations and by weak antilocalization (WAL) in an in-plane magnetic field. The effective g-factor g* and zero field spin splitting Δ 0 are extracted from tilt angle dependent beating pattern. We found that g* shows a dramatic reduction with increasing carrier density due to the increased effective band gap. Furthermore, an anomalously rapid suppression of the WAL effect with increasing in-plane magnetic field B|| is observed. This reveals that the total dephasing rate is not solely contributed by Zeeman splitting. The microroughness scattering in the QW is proposed to be another factor to cause the dephasing and thus responsible for this effect. © 2013 American Institute of Physics. |
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| Publication date | 2013 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21269919 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 3ae71c45-cca9-4b15-9e77-9edfe3f0cb72 |
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| Record created | 2013-12-13 |
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| Record modified | 2020-04-22 |
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