Thermal oxidation of periodically aligned silicon square-spirals

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Proceedings titleMicroelectronic Engineering
ConferenceMicro- and Nano-Engineering 2007 Conference, MNE 2007, 23–27 September 2007, Copenhagen, Denmark
Pages12221224; # of pages: 3
AbstractThin films composed of silicon square-spirals in a square-lattice array are fabricated using glancing angle deposition and thermally oxidized at 600 °C, 700 °C, 800 °C, 900 °C and 1000 °C. The filling fraction of the square-spiral morphology increases from approximately 0.4 to values between 0.5 and 0.7, depending on oxidation temperature. Maximum filling fraction increase, and thin film expansion, is observed at 700 °C. Complete oxidation is achieved for oxidation temperatures of 700 °C and greater. This range of filling fractions is appropriate for a square-spiral template, which could be used to create the inverse silicon square-spiral photonic crystal structure using a template inversion process.
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AffiliationNRC National Institute for Nanotechnology; National Research Council Canada
Peer reviewedYes
NRC number631
NPARC number8926462
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Record identifier3a7d9bd9-4f05-48ac-8041-144c4ec2b6fd
Record created2009-04-23
Record modified2016-05-09
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