Abstract | Thin films composed of silicon square-spirals in a square-lattice array are fabricated using glancing angle deposition and thermally oxidized at 600 °C, 700 °C, 800 °C, 900 °C and 1000 °C. The filling fraction of the square-spiral morphology increases from approximately 0.4 to values between 0.5 and 0.7, depending on oxidation temperature. Maximum filling fraction increase, and thin film expansion, is observed at 700 °C. Complete oxidation is achieved for oxidation temperatures of 700 °C and greater. This range of filling fractions is appropriate for a square-spiral template, which could be used to create the inverse silicon square-spiral photonic crystal structure using a template inversion process. |
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