| DOI | Resolve DOI: https://doi.org/10.1109/PVSC.2011.6186060 |
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| Author | Search for: Thomas, Michael1; Search for: Worfolk, Brian J.1; Search for: Rider, David A.1; Search for: Taschuk, Michael T.1; Search for: Buriak, Jillian M.1; Search for: Brett, Michael J.1 |
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| Affiliation | - National Research Council of Canada. National Institute for Nanotechnology
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| Format | Text, Article |
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| Conference | 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, June 19-24, 2011, Seattle, WA, USA |
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| Subject | Bulk heterojunction; Dead-ends; Deposition angle; Exciton dissociation; Free charge carriers; Glancing Angle Deposition; Hetero interfaces; Indium tin oxide coated glass; Motion algorithm; Nano-columns; Nano-structured; Nano-structuring; Nanocolumn; Nanomorphologies; Organic photovoltaic cells; Planar devices; Substrate rotation; Excitons; Heterojunctions; Indium compounds; Morphology; Photoelectrochemical cells; Photovoltaic cells; Substrates; Tin oxides; Photovoltaic effects |
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| Abstract | We investigate nanostructuring approaches in inverted organic photovoltaic cells to increase exciton harvesting. Conventional bulk heterojunctions (BHJs) have disordered morphologies which increase exciton dissociation. However, in BHJs free charge carriers can be trapped in pocket domains and dead ends. Using glancing angle deposition (GLAD) we fabricate vertical nanocolumns to increase heterointerface area while improving charge transport. Nanostructured C 60 columns have been fabricated using GLAD on transparent indium tin oxide coated glass substrates. GLAD can control intercolumn spacing, column shape, film thickness and other properties. When depositing at constant substrate rotation vertical C 60 columns were achieved. Intercolumn spacing was controlled by the deposition angle between substrate and source. To further approach the ideal nanostructure for organic photovoltaic cells (OPVs), the column diameter was controlled through a substrate motion algorithm called phi-sweep. The engineered GLAD nanomorphology yielded a fivefold increase in short-circuit current when compared to planar devices and a two-fold increase in short-circuit current when compared with bulk heterojunctions. © 2011 IEEE. |
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| Publication date | 2011 |
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| Series | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21271930 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 3a30dc41-cd78-41d9-992c-e101992f4af4 |
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| Record created | 2014-05-06 |
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| Record modified | 2020-04-21 |
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