XAFS studies of self-aligned platinum silicide thin films at the Pt M3,2 edge and the Si K-edge

DOIResolve DOI: http://doi.org/10.1051/jp4:19972158
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Proceedings titleProceedings of the 9th International Conference on X-Ray Absorption Fine Structure
Series titleJournal de Physique; Volume 7
Conference9th International Conference on X-ray Absorption Fine Structure : 26-30 August 1996, Grenoble, France
Pages11311132; # of pages: 2
AbstractPt-Si thin films with the thickness of several hundred Å prepared on n-type Si(100) by UHV sputter-deposition procedures and subsequent annealing have been studied with X-ray absorption fine structure spectroscopy at the Pt M3,2 edge and the Si K-edge. It is found that, under favourable conditions, single phase PtSi films can be obtained. These films exhibit the same XAFS characteristics as those of bulk samples. The M3,2 edge exhibits XANES features very similar to those of the Pt L3,2 edge obtained from the samples. The analysis of the Pt M3,2 edge whiteline and the Si K-edge results show significant charge redistribution at both Pt and Si sites upon silicidation.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12338956
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Record identifier3806cd7b-ade9-40fe-a580-5fdd99849b89
Record created2009-09-11
Record modified2016-05-09
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