Photoluminescence efficiency of self-assembled Ge nanocrystals

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Journal titleJournal of the Electrochemical Society
PagesH913H915; # of pages: 2
Subjectamorphous semiconductors; annealing; elemental semiconductors; germanium; k.p calculations; molecular beam epitaxial growth; nanostructured materials; nanotechnology; particle size; photoluminescence; self-assembly; semiconductor growth; silicon compounds; tight-binding calculations; transmission electron microscopy
AbstractFor self-assembled Ge nanocrystals (NCs), the predicted nonlinear increase in the photoluminescence (PL) efficiency with decreasing NC diameter has been evaluated using the NC size distribution observed from transmission electron microscopy. The NCs were formed by thermal annealing of an amorphous Ge layer deposited by molecular beam epitaxy on a thin SiO2 layer on Si(001). For the present range of particle sizes (2.5–60 nm), the NC PL appeared primarily as a wide near-IR band near 800 meV. The peak energy of the PL band reflects the average NC size, and its shape depends on the NC size distribution. Using both the k · p and tight binding models, the PL energy spectrum was transformed into the PL variation with NC size. For smaller diameter NCs, the band shape contains significant bandgap enlargement due to quantum confinement. The present results show how NC size distributions can be obtained from the PL data.
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AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for National Measurement Standards; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number15787744
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Record identifier343792ac-75ca-445c-a2c9-20e83b4ad0e0
Record created2010-07-07
Record modified2016-05-09
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