DOI | Resolve DOI: https://doi.org/10.1063/1.363393 |
---|
Author | Search for: Xia, H.; Search for: Lennard, W.; Search for: Huang, L.; Search for: Lau, Wai-Hung1; Search for: Baribeau, J-M; Search for: Landheer, Dolf2 |
---|
Affiliation | - National Research Council of Canada. NRC Institute for Ocean Technology
- National Research Council of Canada. NRC Institute for Microstructural Sciences
|
---|
Format | Text, Article |
---|
Subject | depth profiles; diffusion; gallium arsenides; impurities; interfaces; photoemission; RBS; silicon; sulfur; X-ray absorption analysis |
---|
Abstract | The depth distribution of sulphur near the Si/GaAs(110) interface has been measured using particle induced x-ray emission (PIXE) in conjunction with Rutherford backscattering spectrometry (RBS); ozone oxidation and a hydrofluoric acid step-etching technique were used for sequential removal of Si/GaAs atomic layers. The depth resolution was also calibrated via 16O(d,p)17O nuclear reaction analysis and x-ray photoemission spectroscopy. PIXE/RBS measurements found a half monolayer of sulphur on the H2Sx passivated GaAs(110) surface. Upon deposition of 15 � silicon on the S-passivated GaAs(110), the total amount of sulphur remained constant as compared to that before Si deposition. However, no orientated S�Ga bonds were detected via the x-ray absorption measurement and the depth profile revealed that the sulphur atoms diffused into both the GaAs substrate and the Si heterolayer. |
---|
Publication date | 1996-10-15 |
---|
In | |
---|
NPARC number | 12338353 |
---|
Export citation | Export as RIS |
---|
Report a correction | Report a correction (opens in a new tab) |
---|
Record identifier | 318ed558-e4ae-4502-ad0a-18fa028e44c7 |
---|
Record created | 2009-09-10 |
---|
Record modified | 2020-03-20 |
---|