Sulphur diffusion at the Si/GaAs(110) interface

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1063/1.363393
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Affiliation
  1. National Research Council of Canada. NRC Institute for Ocean Technology
  2. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Subjectdepth profiles; diffusion; gallium arsenides; impurities; interfaces; photoemission; RBS; silicon; sulfur; X-ray absorption analysis
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NPARC number12338353
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Record identifier318ed558-e4ae-4502-ad0a-18fa028e44c7
Record created2009-09-10
Record modified2020-03-20
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