| DOI | Resolve DOI: https://doi.org/10.1149/1.3700407 |
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| Author | Search for: Lockwood, D.J.1; Search for: Wu, X.1; Search for: Baribeau, J.-M.2; Search for: Modi, N.; Search for: Tsybeskov, L. |
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| Affiliation | - National Research Council of Canada. Measurement Science and Standards
- National Research Council of Canada. Information and Communication Technologies
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| Format | Text, Article |
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| Conference | 2nd International Symposium on Nanoscale Luminescent Materials - 221st ECS Meeting, 6 May 2012 through 10 May 2012, Seattle, WA |
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| Subject | Carrier recombination; CMOS Compatible; Light emitters; Light emitting devices; Si/SiGe; Silicon Germanium; Spectral range; Germanium; Silicon alloys; Nanostructures |
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| Abstract | Epitaxially-grown three-dimensional Si/SiGe nanostructures produce photoluminescence and electroluminescence in the desired spectral range of 1.3-1.6 μm. We show that by controlling and modifying such Ge-rich SiGe nanoclusters during growth it is possible to fabricate very fast and hence more efficient SiGe light-emitting devices. Models for the physics of carrier recombination in these Si/SiGe nanostructures are presented, and a new route toward CMOS compatible light emitters is proposed. ©The Electrochemical Society. |
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| Publication date | 2012 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21269510 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 2fdddbcb-5e5c-46fc-ad77-42b716aa33ab |
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| Record created | 2013-12-12 |
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| Record modified | 2020-04-21 |
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