Fast light-emitting silicon-germanium nanostructures

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Proceedings titleECS Transactions
Conference2nd International Symposium on Nanoscale Luminescent Materials - 221st ECS Meeting, 6 May 2012 through 10 May 2012, Seattle, WA
Pages3142; # of pages: 12
SubjectCarrier recombination; CMOS Compatible; Light emitters; Light emitting devices; Si/SiGe; Silicon Germanium; Spectral range; Germanium; Silicon alloys; Nanostructures
AbstractEpitaxially-grown three-dimensional Si/SiGe nanostructures produce photoluminescence and electroluminescence in the desired spectral range of 1.3-1.6 μm. We show that by controlling and modifying such Ge-rich SiGe nanoclusters during growth it is possible to fabricate very fast and hence more efficient SiGe light-emitting devices. Models for the physics of carrier recombination in these Si/SiGe nanostructures are presented, and a new route toward CMOS compatible light emitters is proposed. ©The Electrochemical Society.
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AffiliationNational Research Council Canada (NRC-CNRC); Measurement Science and Standards; Information and Communication Technologies
Peer reviewedYes
NPARC number21269510
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Record identifier2fdddbcb-5e5c-46fc-ad77-42b716aa33ab
Record created2013-12-12
Record modified2016-05-09
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