DOI | Resolve DOI: https://doi.org/10.1143/APEX.5.022104 |
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Author | Search for: Skierbiszewski, C.; Search for: Siekacz, M.; Search for: Turski, H.; Search for: Muzioł, G.; Search for: Sawicka, M.; Search for: Feduniewicz-Zmuda, A.; Search for: Cywiński, G.; Search for: Cheze, C.; Search for: Grzanka, S.; Search for: Perlin, P.; Search for: Wiśniewski, P.; Search for: Wasilewski, Z.R.1; Search for: Porowski, S. |
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Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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Format | Text, Article |
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Subject | Continuous wave lasing; Differential gain; GaN substrate; Laser structures; Optical modes; Optical output power; Plasma-assisted molecular beam epitaxy; Room temperature; Threading dislocation densities; Threshold currents; Gallium nitride; Molecular beam epitaxy; Epitaxial growth |
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Abstract | Room-temperature continuous wave lasing at 432nm with a threshold current of 7.6 kA/cm2 for nitride-based laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy is reported. The diodes were grown on c-plane GaN substrates with a threading dislocation density of 5 × 107 cm -2. We used a simplified laser structure design with GaN claddings where the optical modes were confined by the thick 120nm In 0:08Ga 0:92N waveguide. Our LDs show a high optical output power of 130mW, a differential gain of 0.5 W/A, and a lifetime of 50 h. © 2012 The Japan Society of Applied Physics. |
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Publication date | 2012 |
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In | |
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Language | English |
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Peer reviewed | Yes |
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NPARC number | 21269434 |
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Export citation | Export as RIS |
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Report a correction | Report a correction (opens in a new tab) |
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Record identifier | 2e73a629-fc64-498d-a24e-266215d4256e |
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Record created | 2013-12-12 |
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Record modified | 2020-04-21 |
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