AlGaN-free laser diodes by plasma-assisted molecular beam epitaxy

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1143/APEX.5.022104
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
SubjectContinuous wave lasing; Differential gain; GaN substrate; Laser structures; Optical modes; Optical output power; Plasma-assisted molecular beam epitaxy; Room temperature; Threading dislocation densities; Threshold currents; Gallium nitride; Molecular beam epitaxy; Epitaxial growth
Abstract
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LanguageEnglish
Peer reviewedYes
NPARC number21269434
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Record identifier2e73a629-fc64-498d-a24e-266215d4256e
Record created2013-12-12
Record modified2020-04-21
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