Role of dislocation-free GaN substrates in the growth of indium containing optoelectronic structures by plasma-assisted MBE

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1016/j.jcrysgro.2007.04.002
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  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
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NPARC number12743777
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