Growth of crack-free, carbon-doped GaN and AlGaN/GaN high electron mobility transistor structures on Si (111) substrates by ammonia molecular beam epitaxy

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1063/1.2215600
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  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
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LanguageEnglish
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NPARC number12744848
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Record identifier2cfaf97a-0bb1-469e-8112-fc923c96e4b5
Record created2009-10-27
Record modified2023-05-10
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