| DOI | Resolve DOI: https://doi.org/10.1007/s11082-012-9549-0 |
|---|
| Author | Search for: Lockwood, D. J.1; Search for: Tsybeskov, L. |
|---|
| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
|
|---|
| Format | Text, Article |
|---|
| Subject | silicon; germanium; dots; photoluminescence; electroluminescence |
|---|
| Abstract | Epitaxially-grown Si/SiGe quantum dot complexes produce efficient photoluminescence and electroluminescence in the desired spectral range of 1.3–1.6µm. The latest progress in our understanding of the physics of carrier recombination in Si/SiGe nanostructures is reviewed, and a new route toward CMOS compatible light emitters is proposed. |
|---|
| Publication date | 2012-02-05 |
|---|
| In | |
|---|
| Language | English |
|---|
| Peer reviewed | Yes |
|---|
| Identifier | 9549 |
|---|
| NPARC number | 21268394 |
|---|
| Export citation | Export as RIS |
|---|
| Report a correction | Report a correction (opens in a new tab) |
|---|
| Record identifier | 2af93d5f-1fd9-4d61-916e-893f1e113396 |
|---|
| Record created | 2013-07-09 |
|---|
| Record modified | 2020-04-21 |
|---|
