| DOI | Resolve DOI: https://doi.org/10.1109/LEOS.1996.571583 |
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| Author | Search for: Guptal, V. K.; Search for: Williams, R. L.1; Search for: Wasilewski, Z. R.1; Search for: Dion, M.1; Search for: Aers, G. C.1; Search for: Norman, C. E. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | 1.3 mum; 1.55 mum; gallium arsenide; III-V semiconductors; indium compounds; indium migration; InGaAs/InAlAs QWs; InGaAs-InAlAs; InGaAs-InAlAs single quantum wells; laser transitions; long wavelength integrated optoelectronic devices; MBE growth; molecular beam epitaxial growth; optical fibre communication; optical fibre communication systems; optical transmitters; optoelectronic device applications; patterned InP substrates; quantum well lasers; selective area bandgap control; semiconductor growth; semiconductor lasers |
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| Abstract | Semiconductor lasers emitting at 1.3 ?m and 1.55 ?m wavelengths are of particular interest because of their application in optical fibre communication systems. In this work, we investigate for the first time the process of indium migration during the growth of InGaAs-InAlAs single quantum wells grown by MBE on patterned InP substrates for the fabrication of long wavelength integrated optoelectronic devices |
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| NPARC number | 12328900 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 2a3f4bc0-cc8d-4023-8eb3-46b35832439f |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-16 |
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