| DOI | Resolve DOI: https://doi.org/10.1049/el.2012.0591 |
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| Author | Search for: Velasco, A. V.; Search for: Bock, P. J.1; Search for: Cheben, P.1ORCID identifier: https://orcid.org/0000-0003-4232-9130; Search for: Calvo, M. L.; Search for: Schmid, J. H.1; Search for: Lapointe, J.1; Search for: Xu, D.-X.1; Search for: Janz, S.1; Search for: Delâge, A.1 |
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| Affiliation | - National Research Council of Canada. Information and Communication Technologies
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| Format | Text, Article |
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| Abstract | The fabrication and experimental characterisation of a two-stage band-pass filter based on curved waveguide sidewall gratings is reported for the silicon-on-insulator platform. At each cascaded filtering stage, the spectral components of the input signal are dispersed by the diffraction grating formed in the sidewall of a silicon strip waveguide. Different wavelengths are focused onto different positions along the Rowland circle and the filter central wavelength is selected by a specific receiver waveguide. By using two consecutive filtering stages, both the filter passband profile and the stopband rejection ratio are substantially increased. The grating is apodised and chirped to ensure a constant effective index along the grating length to minimise phase distortions. Blazed geometry is used to maximise the diffraction efficiency to the −1st order. The device was fabricated with electron beam lithography and reactive ion etching using a single etch step. A bandwidth of 6.2 nm was measured near 1590 nm for the fabricated filter, with a roll-off of 4 dB/nm at the passband edge, and a stopband rejection of 40 dB. |
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| Publication date | 2012-06-07 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21268969 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 25b39436-15d1-4c80-9e9e-1425999a8689 |
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| Record created | 2013-11-28 |
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| Record modified | 2020-04-21 |
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