DOI | Resolve DOI: https://doi.org/10.1117/12.432536 |
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Author | Search for: Dubowski, Jan1; Search for: Moisa, Simona2; Search for: Komorowski, B.; Search for: Tang, Haipeng2; Search for: Webb, James B.3 |
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Affiliation | - National Research Council of Canada. NRC Institute for Chemical Process and Environmental Technology
- National Research Council of Canada. NRC Institute for Microstructural Sciences
- National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
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Format | Text, Article |
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Conference | SPIE Photonics West's 2001, San Jose, USA January 22-24, 2001 |
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Abstract | The ablative decomposition of GaN films induced with a XeCl excimer laser ((lambda) equals 308 nm) was investigated for a potentially low-damage surface planarization process. Samples, 2-micrometers -thick, were grown on (0001) sapphire by ammonia molecular beam epitaxy. They had a characteristic micro-hillock type surface morphology with a roughness, averaged over 5 x 5 micrometers 2 area, typically, of 13 nm. Following the laser irradiation, this roughness could be reduced to 3.6 nm. The results indicate that the ablation process follows the Lambert-Beer's law, with an absorption coefficient of 3 x 105 cm-1. The experiment was carried out with relatively short pulses ((tau) equals 10 ns), which appear to be responsible for the observed onset of the laser-induced decomposition of GaN and surface planarization at significantly smaller laser fluences than reported in the literature. The ability to carry out decomposition of GaN with low laser fluences is of practical importance for achieving a low-damage GaN planarization process and/or intentional delaminating of this material from the sapphire substrate by the back side irradiation technique. |
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Publication date | 2001-06 |
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Series | |
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Language | English |
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NPARC number | 12346482 |
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Export citation | Export as RIS |
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Record identifier | 21ebab3a-26c1-4232-afe7-41a6cb2f65de |
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Record created | 2009-09-17 |
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Record modified | 2020-03-27 |
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