Laser polishing of GaN

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Proceedings titleLaser Applications in Microelectronic and Optoelectronic Manufacturing VI
Series titleProceedings of SPIE; Volume 4274
ConferenceSPIE Photonics West's 2001, San Jose, USA January 22-24, 2001
Pages442447; # of pages: 6
AbstractThe ablative decomposition of GaN films induced with a XeCl excimer laser ((lambda) equals 308 nm) was investigated for a potentially low-damage surface planarization process. Samples, 2-micrometers -thick, were grown on (0001) sapphire by ammonia molecular beam epitaxy. They had a characteristic micro-hillock type surface morphology with a roughness, averaged over 5 x 5 micrometers 2 area, typically, of 13 nm. Following the laser irradiation, this roughness could be reduced to 3.6 nm. The results indicate that the ablation process follows the Lambert-Beer's law, with an absorption coefficient of 3 x 105 cm-1. The experiment was carried out with relatively short pulses ((tau) equals 10 ns), which appear to be responsible for the observed onset of the laser-induced decomposition of GaN and surface planarization at significantly smaller laser fluences than reported in the literature. The ability to carry out decomposition of GaN with low laser fluences is of practical importance for achieving a low-damage GaN planarization process and/or intentional delaminating of this material from the sapphire substrate by the back side irradiation technique.
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AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Institute for Chemical Process and Environmental Technology; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12346482
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Record identifier21ebab3a-26c1-4232-afe7-41a6cb2f65de
Record created2009-09-17
Record modified2017-09-13
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