Light emission in silicon nanostructures

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EditorSearch for: Gaburro, Z.
Proceedings titleOptical Properties of Nanocrystals
Series titleProceedings of SPIE; Volume 4808
ConferenceOptical Properties of Nanocrystals, 9-11 July 2002, Seattle, Washington, USA
Pages112; # of pages: 12
AbstractThe many and diverse approaches to materials science problems have greatly enhanced our ability in recent times to engineer the physical properties of semiconductors. Silicon, of all semiconductors, underpins nearly all microelectronics today and will continue to do so for some time to come. However, in optoelectronics, the severe disadvantage of an indirect band gap has limited the application of elemental silicon. Here we review a number of diverse approaches to engineering efficient light emission in silicon nanostructures. These different approaches are placed in context and their prospects for application in silicon-based optoelectronics are assessed.
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AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12346474
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Record identifier16d1632c-a8fb-40cc-8902-dd65947698be
Record created2009-09-17
Record modified2017-09-13
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