High performance zinc oxide thin film transistors through improved material processing and device design

DOIResolve DOI: http://doi.org/10.1115/IMECE2014-36941
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Proceedings titleASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE)
ConferenceASME 2014 International Mechanical Engineering Congress and Exposition, IMECE 2014, 14 November 2014 through 20 November 2014
Article number36941
SubjectCarrier concentration; Schottky barrier diodes; Thin films; Zinc oxide; Electron concentration; Free charge carriers; High-throughput method; Material processing; Poor crystallinity; Schottky barrier thin-film transistors; Solution-processing; Zinc oxide thin films; Thin film transistors
AbstractSolution processing (SP) is a cheap, simple and highthroughput method for the fabrication of ZnO thin film transistors (TFTs). Lack of enhancement mode operation, poor crystallinity, traps, and poor control of the carrier concentration are some of the disadvantages of this method. The high intrinsic electron concentration of SP-ZnO makes saturation of TFTs non-trivial. We report on Schottky barrier thin film transistors (SB-TFT). By biasing the source Schottky contact in reverse bias, a depletion region is formed around the source contact hence depleting the region from the free charge carriers which produces the saturation of the device. The effect of the Schottky contact is illustrated by comparing the operation of SB-TFTs with that of conventional TFTs.
Publication date
PublisherAmerican Society of Mechanical Engineers
AffiliationNational Research Council Canada (NRC-CNRC); National Institute for Nanotechnology
Peer reviewedYes
NPARC number21275458
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Record identifier1696b417-9c91-428c-9ef3-8c802ec99321
Record created2015-07-14
Record modified2016-05-09
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