DOI | Resolve DOI: https://doi.org/10.1116/1.3548875 |
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Author | Search for: Gurovich, B.A.; Search for: Prikhod'Ko, K.E.; Search for: Taldenkov, A.N.; Search for: Chumakov, N.K.; Search for: Fedorov, G.E.; Search for: Yakubovsky, A.Y.; Search for: Bogdanov, A.L.1 |
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Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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Format | Text, Article |
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Subject | Bismuth nanowires; Bismuth oxides; Contact pads; Dielectric matrixes; e-Beam lithography; Electrical property; Electron beam resist; High aspect ratio; Ion beam irradiation; matrix; Metal film; Metal nanowire; Metal oxides; Metal wires; Oxygen atom; Parallel nanowires; Selective removal; Single layer; Zeon Chemicals; Aspect ratio; Bismuth; Electric properties; Electric wire; Electron beam lithography; Fabrication; Ion beams; Irradiation; Metallic compounds; Nanowires; Oxygen; Protons; Metals |
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Abstract | A method of ion-beam-induced reduction in oxides is used to produce metal-bismuth nanowires embedded into a matrix of a highly insulating dielectric-bismuth oxide. The metal film is formed in the process of reduction of the metal oxide by selective removal of oxygen atoms under irradiation by the beam of protons through a mask. The mask containing pairs of parallel nanowires with contact pads was fabricated using 50 kV electron-beam lithography in a single layer of 200-nm-thick ZEP-520 (Zeon Chemicals L.P., ZEP-520 electron-beam resist) electron-beam resist. Electrical properties of the fabricated nanowires have been studied. Broadening of the fabricated metal wires with respect to the initial mask width was found to be dependent on the energy of irradiating protons. This effect may be attributed to the scattering of protons in the oxide-film. It is shown that the method of selective atom removal combined with high aspect ratio e-beam lithography is a feasible technique for fabrication of metal nanowires embedded in a dielectric matrix of metal oxide. © 2011 American Vacuum Society. |
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Publication date | 2011 |
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In | |
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Language | English |
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Peer reviewed | Yes |
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NPARC number | 21271139 |
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Export citation | Export as RIS |
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Report a correction | Report a correction (opens in a new tab) |
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Record identifier | 15d34570-d6ff-4ef7-a634-442c1998b80a |
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Record created | 2014-03-24 |
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Record modified | 2020-04-21 |
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