Effect of emitter design on the dc characteristics of InP-based double-heterojunction bipolar transistors
Effect of emitter design on the dc characteristics of InP-based double-heterojunction bipolar transistors
DOI | Resolve DOI: https://doi.org/10.1088/0268-1242/16/3/309 |
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Author | Search for: ; Search for: 1; Search for: 1; Search for: ; Search for: 1 |
Affiliation |
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Format | Text, Article |
Publication date | 2001 |
In | |
NPARC number | 12744754 |
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Record identifier | 14a748bf-39ea-4603-9392-07c71cd5184c |
Record created | 2009-10-27 |
Record modified | 2020-03-27 |
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