Disorder and defect formation mechanisms in molecular-beam-epitaxy grown silicon epilayers

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1016/j.tsf.2012.11.140
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Affiliation
  1. National Research Council of Canada. Information and Communication Technologies
  2. National Research Council of Canada. Measurement Science and Standards
FormatText, Article
SubjectMolecular beam epitaxy; Disordered silicon; Defects; Electron spin resonance; Microstructure
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LanguageEnglish
Peer reviewedYes
NPARC number21269836
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Record identifier1185aa14-f6fc-4162-8687-597caedc8ad3
Record created2013-12-13
Record modified2020-04-22
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