High-Speed AlGaN/GaN HFETs Fabricated by Wet Etching Mesa Isolation

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1049/el:20001351
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
  2. National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
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NPARC number12328413
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Record identifier0d8aa33a-ac50-48cb-b165-fd57f9c225d6
Record created2009-09-10
Record modified2020-03-26
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