Density multiplication of nanostructures fabricated by ultralow voltage electron beam lithography using PMMA as positive- and negative-tone resist

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1116/1.3657512
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Affiliation
  1. National Research Council of Canada. National Institute for Nanotechnology
FormatText, Article
SubjectA-density; dot diameter; electron dose; electron-beam exposure; fabricated structures; feature sizes; low voltages; nano-scale patterns; negative tones; single pixel; ultralow voltage; electron beam lithography; electron beams; fabrication; nanostructures; scanning electron microscopy; electrons
Abstract
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LanguageEnglish
Peer reviewedYes
NPARC number21271935
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Record identifier088347db-7cec-479d-89a3-968f693a5e3b
Record created2014-05-07
Record modified2020-04-21
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