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Hot-carrier induced degradation and recovery in polysilicon-emitter bipolar transistors

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1016/S0038-1101(02)00112-0
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Publication date
In
  • Solid State Electronics 46, no. 10 (2002): 1603–1608.
NPARC number12744019
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Record identifier07fa4a8e-7dcb-4e81-99c6-c018673591d2
Record created2009-10-27
Record modified2020-03-30
Date modified: