| DOI | Resolve DOI: https://doi.org/10.1109/68.531817 |
|---|
| Author | Search for: Poole, P. J.1; Search for: Davies, M.1; Search for: Dion, M.1; Search for: Feng, Y.1; Search for: Charbonneau, S.1; Search for: Goldberg, R. D.; Search for: Mitchell, I. V. |
|---|
| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
|
|---|
| Format | Text, Article |
|---|
| Subject | /spl mu/m laser structure bandgap; 1.5 mum; absorbing section; broad spectrum light emitting diode; broad-spectrum light-emitting diode; emission full width half maximum; Fabry-Perot noise; high-energy ion implantation; ion implantation; lasing operation suppression; LED; optical fabrication; semiconductor quantum wells; semiconductor technology; superluminescent diode fabrication; superluminescent diodes |
|---|
| Abstract | High-energy ion implantation is used to spatially modify the bandgap of a 1.5-/spl mu/m laser structure to fabricate a broad spectrum light emitting diode (LED). An increase in the emission full width half maximum (FWHM) from 28 nm to 90 nm is observed. An absorbing section at one end of the device is used to suppress lasing operation and remove Fabry-Perot noise. |
|---|
| Publication date | 1996 |
|---|
| In | |
|---|
| NPARC number | 12327990 |
|---|
| Export citation | Export as RIS |
|---|
| Report a correction | Report a correction (opens in a new tab) |
|---|
| Record identifier | 070b3931-5416-4a48-b4fd-732f0abe191e |
|---|
| Record created | 2009-09-10 |
|---|
| Record modified | 2020-03-20 |
|---|
