Charge control of surface dangling bonds using nanoscale Schottky contacts

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Journal titleACS Nano
Pages19841989; # of pages: 6
SubjectBandbending; Bond charges; Charge control; Contact regions; Nano scale; Near-contact regions; Scanning tunneling microscopes; Scanning tunneling spectroscopy; Schottky contacts; Si(100) surface; Sloping surfaces; Surface band bending; Surface dangling bonds; Titanium silicide; Nanostructured materials; Scanning tunneling microscopy; Semiconducting silicon compounds; Silicides; Titanium compounds; Dangling bonds
AbstractTitanium silicide (TiSi 2) nanoscale Schottky contacts were prepared on hydrogen-terminated n-type Si (100) surfaces. The Schottky contact created a region of upward band bending surrounding the TiSi 2 contacts. The surface band bending was observed as a sloping surface depression using the scanning tunneling microscope. Scanning tunneling spectroscopy measurements also show shifted I/V data consistent with upward band bending. Charge control of dangling bonds was accomplished through a distance relationship between the dangling bond and the TiSi 2 contact. The lowered chemical potential in the near contact region removes the ability of dangling bonds to become negatively charged while dangling bonds outside the close contact region remain fully charged. Methods to actively control dangling bond charge states are discussed. © 2011 American Chemical Society.
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AffiliationNational Research Council Canada (NRC-CNRC); National Institute for Nanotechnology
Peer reviewedYes
NPARC number21271922
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Record identifier011d926b-6b0c-404a-a19c-b42eaf2ccda3
Record created2014-05-06
Record modified2016-05-09
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