| DOI | Resolve DOI: https://doi.org/10.1126/science.274.5291.1350 |
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| Author | Search for: Fafard, S.1; Search for: Hinzer, K.1; Search for: Raymond, S.1; Search for: Dion, M.1; Search for: McCaffrey, J.1; Search for: Feng, Y.1; Search for: Charbonneau, S.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | Visible-stimulated emission in a semiconductor quantum dot (QD) laser structure has been demonstrated. Red-emitting, self-assembled QDs of highly strained InAlAs have been grown by molecular beam epitaxy on a GaAs substrate. Carriers injected electrically from the doped regions of a separate confinement heterostructure thermalized efficiently into the zero-dimensional QD states, and stimulated emission at sim 707 nanometers was observed at 77 kelvin with a threshold current of 175 milliamperes for a 60-micrometer by 400-micrometer broad area laser. An external efficiency of sim 8.5 percent at low temperature and a peak power greater than 200 milliwatts demonstrate the good size distribution and high gain in these high-quality QDs. |
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| Publication date | 1996-11-22 |
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| In | |
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| NPARC number | 12338451 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 005caa69-3321-4130-af40-77529a006425 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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